As artificial intelligence advances, computers demand faster and more efficient memory. The key to ultra-high-speed, low-power semiconductors lies in the “switching” principle—the mechanism by which memory materials turn electricity on and off. A South Korean research team has successfully captured the elusive moment of switching and its internal operational principles by momentarily melting and freezing materials within nano-devices—phenomena that were previously difficult to observe. The study provides a foundational blueprint for designing next-generation memory materials that are faster and consume less power based on fundamental principles.