A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access memory (MRAM) using a new material called thulium iron garnet (TmIG) that has been attracting global attention for its ability to enable high-speed, low-power information rewriting at room temperature. The team hopes their findings will lead to significant improvements in the speed and power efficiency of high-computing hardware, such as that used to power generative AI.